公海555000kk线路检测・(中国)有限公司

摘要

As the semiconductor device continues scaling down, conventional Flash memory is facing more and more bottlenecks and will be very difficult to go through 16 nm node. According to the white paper of ITRS 2011, STT-MRAM and RRAM are thought as the most promising technologies among various emerging non-volatile memory concepts, and are worthy to put additional focuses on research and development to accelerate the progress toward commercialization. In this talk, a brief introduction on Solid-Electrolyte-Based RRAM technology will be given and its opportunities & challenges will be discussed, research works of this kind of RRAM in IMECAS will be introduced.  

报告人简介

刘明  中国科学院微电子研究所研究员，主要从事纳米加工、新型存储器研究。973项目首席科学家、国家杰出青年基金获得者和基金委创新群体负责人。发表SCI收录论文150余篇, SCI引用超过2900次，6篇论文入选ESI高被引论文榜。获得2013年国家发明二等奖（排名第一）、2007年国家发明二等奖（排名第二）、2005年国家发明二等奖（排名第四）、2009年国家科技进步二等奖（排名第四）和2012年真空科技成就奖。

邀请人：贾金锋 jfjia@sjtu.edu.cn