Bing Dong was born in Chongqing, China, on April 8, 1969. He received the M.S. degree in theoretical physics from the Shanghai Jiaotong University, Shanghai, P.R. China, in 1994, and the Ph.D. degree in theoretical condensed matter physics from the Shanghai Institute of Metallurgy, Shanghai, P.R. China, in 1998. He was an associated professor (1998-2000) with the Shanghai Institute of Metallurgy, was a visiting research associate professor (2002-2005) with Department of Physics and Engineering Physics of Stevens Institute of Technology at New Jersey, and he has been with the Shanghai Jiaotong University since 2000, where he is currently a full professor.
His present research interests include the mesoscopic quantum transport and fluctuation phenomena and strongly correlated effects in the nanometer devices.
“Kondo effect and anti-ferromagnetic correlation in transport through tunneling-coupled double quantum dots”, Bing Dong and X.L. Lei, Phys. Rev. B 65, 241304R(4) (2002).
“Photon-Phonon-assisted tunneling through a single-molecular quantum dot”, Bing Dong, H.L. Cui, and X.L. Lei, Phys. Rev. B 69, 205315(9) (2004).
“Pumped spin-current and shot noise spectra in a single quantum dot”, Bing Dong, H.L. Cui, and X.L. Lei, Phys. Rev. Lett. 94，66601(4) (2005).
“Inelastic cotunneling-induced decoherence and relaxation, charge, and spin currents in an interacting quantum dot under a magnetic field”, Bing Dong, N.J.M. Horing, H.L. Cui, Phys. Rev. B 72, 165326(14) (2005).
“Qubit measurement by quantum point contact: A quantum Langevin equation approach”, Bing Dong, Norman J. M. Horing, and X. L. Lei, Phys. Rev. B 74, 033303(1-4) (2006).
“Elimination of negative differential conductance in an asymmetric molecular transistor by an ac voltage”, Bing Dong, X. L. Lei, and N. J. M. Horing, Appl. Phys. Lett. 90, 242101 (2007).
“Vibration-assisted tunneling and shot noise through a molecular quantum dot”, X. Y. Shen, Bing Dong, X. L. Lei, and N. J. M. Horing, Phys. Rev. B 76, 115308 (2007).
微信公众号
